KAWASAKI, Japan, 12 November 2024 – Toshiba Electronic Devices & Storage Corporation has announced that it has commenced the shipment of test samples of its X5M007E120 SiC MOSFET.
This particular model has been designed specifically for automotive traction inverters. The new technology is stated to have a 1200V with low on-resistance which is quite beneficial for enhancing the efficiency and life of electric vehicle (EV) applications.
The specific design of the SiC MOSFET utilizes Schottky barrier diodes (SBDs) which are embedded in the device’s structure, arranged in a specially-designed check-pattern for reduced resistance and reliability in harsher operating conditions.
This revolutionary design also addresses the long-standing problems of durability since on-resistance change due to reverse conduction is reduced.
“With the configuration of our MOSFET, it is more efficient and more likely to last,”
Said Toshiba Chief Engineer Hiroshi Watanabe.
Further, the company believes this technology will help reduce the total energy usage of electric vehicle systems by improving the efficiency of power conversion in automotive traction inverters.
The X5M007E120 is expected to increase Toshiba’s targets for sustainable transport solutions with mass production due in 2026.
“This development of MOSFET fits perfectly into our decarbonized society vision,”
Said Taro Ishikawa, Head of Product Development.
In addition, the strength of the component against short circuits and its design flexibility allows for more customization, making it ideal for tough automotive applications.
Toshiba will also be continuously improving the SiC MOSFET and will have extra engineering samples available by the year 2025.
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