November 7, 2024 – Samsung Electronics, the leading manufacturer of memory technology, has announced the much-anticipated 24-gigabit GDDR7 DRAM, which has promising speeds of over 40Gbps as well as improvement in power consumption efficiency, thereby raising the bar in the industry. This GDDR7 DRAM is aimed at a wide variety of next-generation uses including graphics, making it adaptable for AI workstations, data centers, autonomous systems, and high-end gaming. The cutting-edge memory offering from Samsung enhances its earlier GDDR6 in many ways to satisfy the increasing demand for high-performance computing.
The 24Gb GDDR7 DRAM employs Samsung’s 10-nanometer class technology that enhances cell density by 50% while retaining the same slim package of its predecessor, enabling better memory storage with no extra physical packaging space. One of the notable features included is the three-level Pulse-Amplitude Modulation (PAM3) signaling which enables data speeds surpassing 40Gbps – a 25% increase from the older designs. Such a level of performance implies that AI applications that perform tasks that depend on data transfer over high speeds will cause little processing power latencies.
Additionally, to emphasize the extent of its innovation, the company has incorporated features used in mobile technology into the GDDR7 such as clock control management and dual VDD design. These ensure that there is no wasteful power usage and thus efficiency is increased, resulting in 30% better power efficiency as compared to older versions of the same DRAM. Power-gating design techniques also help in preventing current leakage which maintains working stability during fast operations.
Customer validation is expected to begin this year, and mass production is targeted for the early part of the following year. Samsung’s 24Gb GDDR7 DRAM is set to be quickly embraced across many sectors, enabling Samsung to lead in providing memory solutions best suited for future applications of AI and high-performance computing.
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